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  • Volume 33, Issue 7
  • Volume 33, Issue 7

    Th Lfw30718 63
    July 1, 1997
    Raman spectra of pollutants, diamond films, and proteins obtained with UV laser excitation provide new windows into chemical properties.
    A small-field 193-nm stepper provides photoresist researchers with a development and test tool (left); SVG Lithography system produced this pattern of 0.2 µm features in silylation resist (right; image courtesy of MITLL; used by permission).
    July 1, 1997
    Optical lithography is the primary method for bulk manufacture of integrated circuits.

    More content from Volume 33, Issue 7

    Th Lfw30774 44
    July 1, 1997
    Despite attempts to replace it with alternatives, mercury cadmium telluride remains the most important material for infrared photodetectors.
    Th Lfw30739 38
    July 1, 1997
    Matching micron-sized tolerances, maximizing coupling efficiencies, and minimizing retroflections are essential to successful optoelectronic package design.
    (Photo courtesy of MITLL; used by permission)
    FIGURE 1. Fused silica samples are irradiated with an argon fluoride excimer laser beam to evaluate performance in 193-nm lithographic systems. Visible fluorescence is indicative of the absorption of 193-nm radiation, though the correlation between the two is not straightforward.
    July 1, 1997
    Projection optics for lithographic steppers are typically complex, expensive systems formed of precision components and cost in excess of $1 million. These objectives must provide...
    High-purity quartz photomask containing precision image of an integrated circuit is used to pattern the circuit image onto a semiconductor wafer.
    July 1, 1997
    Photomasks are the fundamental component of optical lithography, the element that actually produces the pattern projected on the wafer.