Northrop Grumman demos 850 GHz integrated receiver circuit aiming at terahertz photonics

July 31, 2012
Redondo Beach, CA--Northrop Grumman Corporation (NYSE:NOC) has demonstrated an 850 gigahertz (GHz) integrated receiver that could benefit high-resolution terahertz imaging and spectroscopy.

Redondo Beach, CA--Northrop Grumman Corporation (NYSE:NOC) has demonstrated an 850 GHz integrated receiver that could benefit high-resolution terahertz imaging and spectroscopy. The achievement brings Northrop Grumman much closer to being the first to reach a Department of Defense goal for developing transistor-based electronics that can operate at center frequencies past 1 THz.

Company engineers reported they scaled the frequency rate to 850 GHz under Phase 2 of the Defense Advanced Research Project Agency (DARPA) Terahertz Electronics program, setting a new performance record. Under Phase 1, they developed a terahertz monolithic integrated circuit that operated at 670 GHz in 2010.

"Integrated circuits operating at frequencies past 1 THz will enable submillimeter-wave technology for covert, small aperture communications, high-resolution imaging, and leap-ahead advancements in explosive detection spectroscopy," said William Deal, Terahertz Electronics program manager for Northrop Grumman's Aerospace Systems sector.

In addition to demonstrating low-noise integrated receivers under the DARPA program, the company developed and tested low-noise amplifiers and power amplifiers. "Success in the initial phase led to a $12.5 million contract, bringing the total value of the program to $28 million," Deal said.

The goal of DARPA's Terahertz Electronics program is to develop the critical device and integration technologies necessary to realize compact, high-performance electronic circuits that operate at center frequencies exceeding 1.0 THz. The program focuses on two areas: terahertz high-power amplifier modules and terahertz transistor electronics.


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