320 nm single frequency diode-pumped solid-state laser developed as an efficient, compact alternative to helium cadmium (HeCd) sources.
Engineered for consistent long-term performance, delivering up to 200 mW of ultra-stable output, low noise, and spectral purity.
Designed for applications across semiconductor inspection, wide bandgap materials, 2D materials, laser interference lithography, gratings fabrication, UV Raman, and photoluminescence (PL).
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