Vilnius, Lithuania--Brolis Semiconductors has opened a new production facility for laser diodes and molecular-beam epitaxy (MBE) equipment. The site was established from scratch in just nine months, with total investment of around Euro 5 million.
Brolis specializes in mid-IR type-I gallium antimonide (GaSb) laser diodes (1800-4000 nm wavelength) on GaSb substrates, targeting markets from gas sensing for industrial process monitoring, medical, and defense to high-power laser diodes and laser-diode bars for plastic laser welding. Earlier this summer the company secured state support for its development of long-wavelength semiconductor laser technology. It also has secured venture capital funding and grants from the EU.
The new building features Class 1000/10000 cleanroom environment with dedicated facilities for molecular beam epitaxy and optoelectronic device testing and packaging. Company COO Augustinas Vizbaras has said that its first laser products will fall in the 2090-3400 nm wavelength range, some of which will be for high power.
"This ceremony marks a great event for us, the cofounders, as well as our company people," said Dominykas Vizbaras, CEO of Brolis Semiconductors. He added that the company's next goal is to roll out its first batch of R&D laser diode products by the end of February 2013 and establish a position over the next few years "as a reliable supplier for mid-infrared optoelectronic components and epi-material in the global market."
James Montgomery, Associate Editor, Industrial Laser Solutions contributed to this article.