Brolis Semiconductors to invest more into expansion of its long-wavelength laser-diode R&D facilities in 2014

Vilnius, Lithuania--The Lithuanian Ministry of Economy has approved European Union (EU) structural-funds support for Brolis Semiconductor's expansion of its laser-diode R&D facility in 2014; the project has an estimated total total budget of about 1.6 M EUR.

Brolis makes long-wavelength laser diodes based on gallium antimonide (GaSb) -- for example, a continuous-wave (CW) laser diode that emits 160 mW TEM₀₀ and 700 mW multimode at a 2.1 μm wavelength. Other versions of the laser emit at 2.73 and 3.0 μm. THe company also offers molecular-beam-epitaxy services for the AlGaInAsSb material system.

Such lasers are useful for gas sensing, industrial process monitoring, medical and eye-safe defense applications, and welding plastics.

In the arrangement, the EU is to cover 46% of the total project cost. The expansion of the R&D facility will include additional cleanroom space and will focus on laser-diode development, with particular emphasis on their reliability and yield optimization.

“We have managed to start up the fab in less than 9 months from scratch; we started operating early this year and we already have pilot devices with state-of-the-art performance, including 25% wall-plug efficiency and high-brightness watt-level CW laser diodes with extremely low input powers,” says Kristijonas Vizbaras, Brolis CTO. "Our goal is to continue innovation, and do everything possible to bring these to market as soon as possible."

Source: http://www.brolis-semicon.com/category/news