OSI Optoelectonics to showcase silicon photodiodes at SPIE Photonics West 2019
A line of annular quadrant silicon photodiodes operates between 350 and 1100 nm, and has use in backscatter reflectivity measurements.
A line of annular quadrant silicon photodiodes operates between 350 and 1100 nm, and has use in backscatter reflectivity measurements. They feature a 200 µm laser-cut hole on the chip and the header that enables a fiber to be coupled from the back of the detector. Available in TO-5 and TO-8 metal packages, the active area on each element is 1.6 and 19.6 mm2, respectively. Spectral range is from 350 to 1100 nm, with a typical peak wavelength of 980 nm.
SPIE Photonics West booth number: 551
To Learn More:
Contact: OSI Optoelectronics
Headquarters: Hawthorne, CA
Product: Annular quadrant silicon photodiodes
Key Feature: Spectral range from 350 to 1100 nm
What OSI Optoelectronics says:
View more information on the company's annular quadrant silicon photodiodes.
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