Exalos AG

Wagistr 21
Schlieren 8952
Switzerland
215-669-4488
215-752-3663
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More Info on Exalos AG

Developer and Supplier of Superluminescent Light Emitting diodes (SLEDS) and Swept Sources to the Fiber Optic Gyroscope, Medical Imaging (OCT), Test Equipment, Sensor and AR/VR markets.

Products

1550nm Superluminescent Light Emitting Diode.
1310nm Superluminescent Light Emitting Diode.
840nm Superluminescent Light Emitting Diode, TO-56 Package.
650nm Superluminescent Light Emitting Diode, TO-56 Package
440nm Superluminescent Light Emitting Diode, TO-56 Package.

Articles

(Image credit: Exalos)
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A line of distributed-feedback (DFB) lasers is based on gallium nitride (GaN) semiconductors.
(Image credit: Exalos)
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488-nm Fabry-Perot laser diodes are based on aluminum indium nitride layers.
The silicon nitride photonic chip-based microresonator with the butt-coupled, 461 nm EXALOS laser diode.
Swiss Federal Institute of Technology Lausanne (EPFL) researchers recently demonstrated a hybrid integrated laser using gallium nitride (GaN) ultraviolet (UV)/visible laser diodes...
FIGURE 1. An SD-OCT (a) and SS-OCT (b) system, both with reflective Michelson interferometers.
Producing accurate depth information with Fourier-domain optical coherence tomography (FD-OCT) depends on proper light source calibration; there are different considerations for...
A 3D rendering of Exalos' superluminescent light-emitting diode (SLED) product.
Exalos has completed testing of long-life GaN SLEDs that deliver an estimated lifetime of more than 5000 hrs.
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A compact swept-source OEM module integrates a miniature swept source in a 26-pin butterfly package with the associated drive electronics, resulting in a 3.5-in. HDD format suited...
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The EBR370000 balanced receivers from Exalos cover wavelength ranges from 400 to 1600 nm to support applications like optical coherence tomography (OCT), which requires high signal...
The SLED EXS210010 is a fiber-coupled and cooled superluminescent light-emitting diode (SLED) that is centered around 1060 nm.
FIGURE 1. Atomic-force microscopy shows a QD array (InAs on GaAs) for emission at 1300 nm (left). Schematic diagram of conduction band of a single QD, simplified for clarity, shows only two sets of energy levels: 'ground state' (GS) and 'excited state' (ES), analogous to the atomic s and p shells (right).
Despite limited gain and modulation response, quantum dots offer several advantages as optical sources for telecommunications and other industrial applications.

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