IR photoreceivers

    May 1, 1995
    High-performance photoreceivers for Fourier-transform Raman (near IR) and long-wave IR spectroscopy utilize InGaAs photodiodes and HgCdTe photoconductors, respectively. Operation is at 77 K and uses integrated transimpedance preamplifiers. Both receivers have optimized gain-noise characteristics for operating frequencies u¥to 50 kHz. The Raman unit has amplifier-limited performance, and the HgCdTe is background limited.

    High-performance photoreceivers for Fourier-transform Raman (near IR) and long-wave IR spectroscopy utilize InGaAs photodiodes and HgCdTe photoconductors, respectively. Operation is at 77 K and uses integrated transimpedance preamplifiers. Both receivers have optimized gain-noise characteristics for operating frequencies u¥to 50 kHz. The Raman unit has amplifier-limited performance, and the HgCdTe is background limited.

    Cooled photodiodes

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