• Aluminumfree highpower diodes have long lifetimes

    Scientists at Northwestern University (Evanston, IL) have fabricated highpower laser diodes based on indium gallium arsenide phosphide (InGaAsP) latticematched to gallium arsenide (GaAs) substrates. These devices have operated with significantly improved reliability in the same wavelength range as commercially available aluminum gallium arsenide (AlGaAs) laser diodes. They reported that structure design is the key factor in fabricating this type of laser diode. With an emission wavelength of 808
    Aug. 1, 1994

    Eugene D. Jungbluth

    Lamppumped Ti:sapphire laser developed for lidar

    Sign up for Laser Focus World Newsletters
    Get the latest news and updates.

    Voice Your Opinion!

    To join the conversation, and become an exclusive member of Laser Focus World, create an account today!