Aluminumfree highpower diodes have long lifetimes

    Aug. 1, 1994
    Scientists at Northwestern University (Evanston, IL) have fabricated highpower laser diodes based on indium gallium arsenide phosphide (InGaAsP) latticematched to gallium arsenide (GaAs) substrates. These devices have operated with significantly improved reliability in the same wavelength range as commercially available aluminum gallium arsenide (AlGaAs) laser diodes. They reported that structure design is the key factor in fabricating this type of laser diode. With an emission wavelength of 808

    Eugene D. Jungbluth

    Lamppumped Ti:sapphire laser developed for lidar

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