Leuven, Belgium--Micron Technology (Boise ID), Applied Materials (Santa Clara, CA), and Ultratech (San Jose, CA) have all joined the Imec industrial affiliation program (IIAP) on gallium nitride-on-silicon (GaN-on-Si) technology. The multipartner R&D program focuses on the development of GaN-on-Si process and equipment technologies for manufacturing solid-state lighting (LEDs) and other GaN devices on 8 in. Si wafers.
Large Si cheaper, more efficient than small sapphire
Today, state-of-the-art GaN LED manufacturing processes are typically performed on expensive 4 in. sapphire substrates. By depositing GaN material on 8 in. Si substrates, the productivity of GaN-based device manufacturing can be significantly increased. Imec's GaN-on-Si program is utilizing an Applied Materials mainframe to develop 8 in. GaN-on-Si technology that is compatible with the CMOS fab (fabrication facility) infrastructure. This can further enhance productivity and result in lowering device cost.
Micron Technology, Applied Materials, and Ultratech will actively participate in the IIAP at Imec in Leuven, Belgium. This on-site participation enables the partner companies to have early access to next-generation LED and power-electronics processes, equipment, and technologies.
