• Discovery Semiconductors uncooled IR photodiodes handle current up to 15 mA

    The 2.2 μm cutoff, uncooled, InGaAs high-speed photodiodes are hermetically sealed, fiber pigtailed, and designed for high optical-power applications with minimum bandwidths of 10, 14, and 18 GHz, respectively.
    Oct. 9, 2012
    2 min read

    The 2.2 μm cutoff, uncooled, InGaAs high-speed photodiodes are hermetically sealed, fiber pigtailed, and designed for high optical-power applications with minimum bandwidths of 10, 14, and 18 GHz, respectively. They handle current up to 15 mA, have typical polarization-dependent loss of 0.05 dB, and cover a range of 1200 to 2200 nm.
    Discovery Semiconductors
    Ewing, NJ

    www.discoverysemi.com

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    PRESS RELEASE

    High Speed Uncooled 2.2 Micron Wavelength InGaAs Photodiodes to 20GHz

    The 2.2 micron cutoff, uncooled, InGaAs high speed photodiodes are hermetically sealed, fiber pigtailed, and designed for high optical power applications with minimum bandwidths of 10, 14 and 18 GHz, respectively. The devices are well suited for applications using fiber amplifiers, and are available in either a K-connector package or a miniature surface mount package with CPW (coplanar waveguide) RF output, and utilizes Discovery’s high-reliability InGaAs photodiode technology.

    Salient Features:

    High Current Handling (up to 15 mA)
    Lowest PDL (typical 0.05 dB)
    Useable spectral wavelength range 1200 – 2200 nm
    Low Group Delay
    K-connector or surface mount package options
    One device for multiple wavelengths reduces operational & inventory costs

    Applications:

    Fiber Laser Systems at 2.05 Micron
    High Dynamic Range, Analog RF Links over Fiber
    Rapid Doppler-Shift LIDAR measurements
    Coherent Lightwave Systems
    Ideal Front-End O/E Converter for Test Instruments
    Environmental Sensing
    Time Resolved Spectroscopy
    Free Space Communications

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