Ann Arbor, MI, February 25, 2003. A new Thomas Swan Scientific Equipment (TSSE) close-coupled showerhead (CCS) MOCVD reactor has been successfully commissioned for the III-V Integrated Devices and Circuits Group of Professor Dimitris Pavlidis at the University of Michigan. The new reactor system will be used for the research and development of high power/high temperature GaN-based HEMT devices and Microwave Monolithic Integrated Circuits (MMICs), sensors and two terminal devices for signal generation, amplification, mixing and multiplication.
Professor Pavlidis has worked on various types of III-V semiconductor devices, MMICs and material systems over the last 30 years. Nitride contributions from his group over the last ten years addressed MOCVD growth, Negative Differential Resistance (NDR) diodes, low-, high frequency noise and power characteristics of HEMTs, Professor Pavlidis will be applying the extensive expertise acquired from his career in industry and university to the development of GaN-based electronic components for use in communications and sensing. By integration of such components with other passive, active, as well as optical devices, he will address a variety of applications that range from biomedical to automotive and space.
As noted by Professor Pavlidis, "the new CCS MOCVD reactor provides already new dimension to our research by allowing considerable improvement in the properties, control and reproducibility of nitride growth for state of the art devices as compared with the home made reactor we used over the last ten years."
Professor Pavlidis's group and TSSE are pleased to announce that they have signed a co-operation agreement for the development of nitride growth procedures suitable for optimum electronic device performance.
Acquisition of the new TSSE equipment was made possible through funds provided by the Office of Naval Research, University of Michigan and other federal and industry programs conducted under the supervision of Professor Pavlidis.
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