August 22, 2005, Silver Spring, MD--Technologies and Devices International (TDI) announced a significant step in the development of advanced hydride vapor-phase epitaxial (HVPE) technology for group III nitride products by demonstrating indium nitride (InN) epitaxial layers and structures.
Optoelectronic and electronic devices based on Group III Nitride materials--gallium nitride (GaN), aluminum nitride (AlN), and InN--are the subject of intense development for various applications, including solid-state lighting, bio and chemical detection systems, environmental applications, communications, and military equipment. The GaN-based market is projected to reach $5 billion in 2007 and exceed $7 billion in 2009.
"This result is an important step towards HVPE technology for InN-containing materials and devices including high-brightness blue, UV, and white light-emitting diodes (LEDs)," noted Alexander Syrkin, crystal-growth key specialist at TDI. "This new process allows us to deposit InN epitaxial layers or 3-D nanosized structures in a controllable manner. Development of InN and InGaN materials and structures is progressing rapidly, thanks to intense collaboration with the Army Research Laboratory and Texas Technical University."
