• Companies agree to develo¥gallium nitride blue-emitting laser diodes

    Citing the potential for increased capacity of optical storage systems and for critical impact on future military systems, Cree Research (Durham, NC) and Philips Laboratories (Briarcliff Manor, NY) have signed an agreement to develo¥blue-emitting laser diodes based on gallium nitride (GaN) material systems grown on silicon carbide wafers. The companies will jointly invest $4 million in the project, while the Advanced Research Projects Agency (ARPA) will provide another $4 million for the two
    May 1, 1995

    Citing the potential for increased capacity of optical storage systems and for critical impact on future military systems, Cree Research (Durham, NC) and Philips Laboratories (Briarcliff Manor, NY) have signed an agreement to develo¥blue-emitting laser diodes based on gallium nitride (GaN) material systems grown on silicon carbide wafers. The companies will jointly invest $4 million in the project, while the Advanced Research Projects Agency (ARPA) will provide another $4 million for the two-year effort.

    Diode-pumped Nd:YAG laser achieves 55% conversion efficiency to the ultraviolet

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