• Fast optoelectronic switch has high sensitivity

    Researchers at IMEC (Leuven, Belgium) and Vrije Universiteit Brussel (Belgium) developed an AlGaAs/GaAs device that acts as an optoelectronic switch at speeds as high as 16 MH¥and is sensitive to opticalenergy differences as low as 250 fJ. In other words, the device completed a switching cycle in 60 ns, switching correctly when exposed to energydensity differences as low as 0.21 fJ/µm2.
    Aug. 1, 1994

    Researchers at IMEC (Leuven, Belgium) and Vrije Universiteit Brussel (Belgium) developed an AlGaAs/GaAs device that acts as an optoelectronic switch at speeds as high as 16 MH¥and is sensitive to opticalenergy differences as low as 250 fJ. In other words, the device completed a switching cycle in 60 ns, switching correctly when exposed to energydensity differences as low as 0.21 fJ/µm2.

    Fullerenes quickly grow lowhydrogen diamond films

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