Lower thresholds and higher power from visible semiconductor lasers

Dec. 1, 1994
Progress in the development of visible laser diodes (VLDs) was reported on several fronts at the IEEE Laser and Electro-Optics Society (LEOS) 1994 Annual Meeting (Oct. 31-Nov. 3, Boston, MA). Invited papers by researchers from Sanyo (Osaka, Japan), Philips (Eindhoven, Netherlands), and NEC (Ibaraki, Japan) all addressed aspects of improving the high-temperature reliability and longevity of AlGaIn¥visible lasers. Although existing VLDs are established in such applications as laser pointers an

Progress in the development of visible laser diodes (VLDs) was reported on several fronts at the IEEE Laser and Electro-Optics Society (LEOS) 1994 Annual Meeting (Oct. 31-Nov. 3, Boston, MA). Invited papers by researchers from Sanyo (Osaka, Japan), Philips (Eindhoven, Netherlands), and NEC (Ibaraki, Japan) all addressed aspects of improving the high-temperature reliability and longevity of AlGaIn¥visible lasers. Although existing VLDs are established in such applications as laser pointers and barcode scanning, demand is increasing for devices rated for more demanding applications including, for example, high-density optical disks and plastic-fiber communications. These typically require that the devices operate at higher temperatures (50°C-70°C) with low threshold currents and short (630-nm) wavelengths.

Silicon wafer holds buried optical waveguide

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