Reaction-bonded silicon carbide ceramic material has use in power electronics

A new grade of proprietary reaction-bonded silicon carbide (RB SiC) ceramic material achieves thermal conductivity of 255 W/(m-K) at 25ºC.
April 1, 2021

A new grade of reaction-bonded silicon carbide (RB SiC) ceramic material achieves thermal conductivity of 255 W/(m-K) at 25ºC. Designed for power electronics applications, including IGBT baseplates, the lightweight material maintains high stiffness.

II-VI Incorporated

Saxonburg, PA

ii-vi.com

GET PRICING

Sign up for Laser Focus World Newsletters
Get the latest news and updates.

Voice Your Opinion!

To join the conversation, and become an exclusive member of Laser Focus World, create an account today!