Zinc oxide nanowires may offer cheaper LEDs

Jan. 3, 2007
January 3, 2007, San Diego, CA--Engineers at the University of California San Diego have synthesized a semiconducting material that may pave the way for an inexpensive new kind of light emitting diode (LED) that could compete with today's widely used gallium nitride LEDs, according to a new paper in the journal Nano Letters.

January 3, 2007, San Diego, CA--Engineers at the University of California San Diego have synthesized a semiconducting material that may pave the way for an inexpensive new kind of light emitting diode (LED) that could compete with today's widely used gallium nitride LEDs, according to a new paper in the journal Nano Letters.

Deli Wang, an electrical and computer engineering professor from UCSD's Jacobs School of Engineering, and colleagues at UCSD and Peking University, report synthesis of high quality p-type zinc oxide nanowires that for years, have been the missing ingredients that prevented engineers from building LEDs from ZnO nanowires. In contrast, making "n-type" ZnO nanowires has not been a problem.

"Zinc oxide nanostructures are incredibly well studied because they are so easy to make. Now that we have p-type zinc oxide nanowires, the opportunities for LEDs and beyond are endless," Wang said.

Wang has filed a provisional patent for p-type ZnO nanowires and his lab at UCSD is currently working on a variety of nanoscale applications.

"Zinc oxide is a very good light emitter. Electrically driven zinc oxide single nanowire lasers could serve as high efficiency nanoscale light sources for optical data storage, imaging, and biological and chemical sensing," Wang said.

For more information, contact the Jacobs School of Engineering at UCSD.

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