IMEC claims first functional 22nm SRAM cell produced using EUV technology

April 23, 2009
April 23, 2009--The nanotechnology research institute IMEC (Leuven, Belgium) presented what it calls the world's first functional 22nm CMOS SRAM cells made using extreme ultraviolet (EUV) lithography, during its core partner review week. The cells, measuring 0.099 micrometers square, were made with FinFETs. IMEC printed both the contact and metal layers using ASML's (Veldhoven, the Netherlands) full-field EUV Alpha Demo Tool (ADT).

April 23, 2009--The nanotechnology research institute IMEC(Leuven, Belgium) presented what it calls the world's first functional 22 nanometer (nm) CMOS SRAM cells made using extreme ultraviolet (EUV)lithography, during its core partner review week. The cells, measuring 0.099 micrometers squared, were made with FinFETs. IMEC printed both the contact and metal layers using ASML's (Veldhoven, the Netherlands) full-field EUV Alpha Demo Tool (ADT).

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