United Epitaxy Contracts for Another MOCVD Reactor

Jan. 29, 2003
Aachen, Germany/Hsinchu, Taiwan, January 29, 2003. - United Epitaxy Company (UEC), a manufacturer of Yellow, Red, Blue, Green and White UHB-LEDs, has ordered another AIXTRON MOCVD Planetary Reactor to further ramp up production of III-Nitride ultra-high-brightness LEDs. The characteristics of the AIX 2600G3 HT, with its high capacity, high utilization efficiency and high uniformities, make this system a cost efficient tool for III-Nitride manufacturing.

Aachen, Germany/Hsinchu, Taiwan, January 29, 2003. - United Epitaxy Company (UEC), a manufacturer of Yellow, Red, Blue, Green and White UHB-LEDs, has ordered another AIXTRON MOCVD Planetary Reactor to further ramp up production of III-Nitride ultra-high-brightness LEDs. The characteristics of the AIX 2600G3 HT, with its high capacity, high utilization efficiency and high uniformities, make this system a cost efficient tool for III-Nitride manufacturing.

Dr. C.C. Tu, President of UEC comments: "Based on our experience using AIXTRON's high throughput production systems under full production, we now have the proof that we can ensure and further improve our leading edge in Nitride-based LED products with ultra-high brightness, at even more remarkably reduced running costs. This is one of the key factors that is driving LED market development". Dr. Christian Geng, General Manager of AIXTRON Taiwan adds: "The new large scale AIXTRON Planetary Reactors are achieving highest material quality, enabling our customers to produce leading-edge devices."

Thanks to AIXTRON's advanced product range of MOCVD Reactors, customers such as UEC can efficiently ramp-up production capacities to strategically position their products onto the UHB-LED market. The AIX 2600G3 HT Reactor, with its capacity for 24x2" wafers, is the largest high temperature Reactor for GaN-based materials available world-wide. The two flow horizontal Planetary Reactor(r) is recognized as the most widely used multiwafer MOCVD reactor for compound semiconductor applications. The system chosen by UEC which includes the EpiTune(r) II in-situ monitoring tool, can monitor processes at a temperature range between 400° C and 1600°C, thus all III-V processes can be real-time monitored.

For more information, visit www.aixtron.com .

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