Temperature and wavelength changes tailor terahert¥emission from InSb

Illuminating semiconductor surfaces with femtosecond laser pulses can generate farinfrared (terahertz) ultrafast pulses. Indium antinomide (InSb) is unusual because its terahert¥emission shifts dramatically in frequency when the temperature is lowered from 260 K to 80 K. To characterize this behavior, a research team at Phillips Laboratory (Kirtland AFB, NM) studied the temperature and wavelength dependence of optically induced terahert¥emission from undoped InSb and telluriumdoped InSb

Illuminating semiconductor surfaces with femtosecond laser pulses can generate farinfrared (terahertz) ultrafast pulses. Indium antinomide (InSb) is unusual because its terahert¥emission shifts dramatically in frequency when the temperature is lowered from 260 K to 80 K. To characterize this behavior, a research team at Phillips Laboratory (Kirtland AFB, NM) studied the temperature and wavelength dependence of optically induced terahert¥emission from undoped InSb and telluriumdoped InSb (Te:InSb). Unlike that observed with InSb, the spectral properties of Te:InSb did not change with temperature.

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