• Temperature and wavelength changes tailor terahert¥emission from InSb

    Illuminating semiconductor surfaces with femtosecond laser pulses can generate farinfrared (terahertz) ultrafast pulses. Indium antinomide (InSb) is unusual because its terahert¥emission shifts dramatically in frequency when the temperature is lowered from 260 K to 80 K. To characterize this behavior, a research team at Phillips Laboratory (Kirtland AFB, NM) studied the temperature and wavelength dependence of optically induced terahert¥emission from undoped InSb and telluriumdoped InSb
    Jan. 1, 1995

    Illuminating semiconductor surfaces with femtosecond laser pulses can generate farinfrared (terahertz) ultrafast pulses. Indium antinomide (InSb) is unusual because its terahert¥emission shifts dramatically in frequency when the temperature is lowered from 260 K to 80 K. To characterize this behavior, a research team at Phillips Laboratory (Kirtland AFB, NM) studied the temperature and wavelength dependence of optically induced terahert¥emission from undoped InSb and telluriumdoped InSb (Te:InSb). Unlike that observed with InSb, the spectral properties of Te:InSb did not change with temperature.

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