Selective oxidation forms lowthreshold VCSELs

Nov. 1, 1994
MAUI, HAWAIIA novel fabrication process and simple construction have resulted in record performance levels for verticalcavity surfaceemitting lasers (VCSELs). Researchers from Sandia National Laboratories (Albuquerque, NM) reported threshold voltages as low as 1.33 V in VCSEL devices with an emitting area of 259 µm2 at the 14th IEEE International Semiconductor Laser Conference in late September (postdeadline paper PD4). Low threshold voltage and currents were possible because of enhanced cur

Eugene D. Jungbluth

SEMICONDUCTOR PROCESSING

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