SDL diode laser produces increased diffraction-limited output power at 635 nm

Dec. 1, 1997
Researchers from SDL Inc. (San Jose, CA) demonstrated what they claim to be the first diffraction-limited continuous-wave (CW) output power of more than 400 mW at 635 nm in a flared unstable-resonator semiconductor laser. Previously, the diffraction-limited visible output-power levels have been about 30 mW, obtained in a narrow-stripe single-mode laser and limited by the high optical densities occurring at the laser facet. Broad-area devices reduce these optical densities but produce multimode o

SDL diode laser produces increased diffraction-limited output power at 635 nm

Researchers from SDL Inc. (San Jose, CA) demonstrated what they claim to be the first diffraction-limited continuous-wave (CW) output power of more than 400 mW at 635 nm in a flared unstable-resonator semiconductor laser. Previously, the diffraction-limited visible output-power levels have been about 30 mW, obtained in a narrow-stripe single-mode laser and limited by the high optical densities occurring at the laser facet. Broad-area devices reduce these optical densities but produce multimode output. The new device combines a narrow 4-µm-wide index-guided single-mode region with a flared gain-guided region--the width of this section increases linearly over the 1500-µm amplification region to 180 µm at the output aperture. The optical power density at the broad aperture is held well below the catastrophic optical damage limit while providing single-mode power levels on the order of hundreds of milliwatts. The researchers expect the laser will be appropriate for applications including high-density data storage, high-speed printing, displays, and solid-state laser pumps. Optical design of such systems, however, must accommodate the additional astigmatism of this source.

Voice your opinion!

To join the conversation, and become an exclusive member of Laser Focus World, create an account today!