Quantum dot laser diodes have use in data communications
O-band high-power, uncooled indium arsenide/gallium arsenide (InAs/GaAs) quantum dot distributed-feedback lasers feature 1.3 µm power, optical isolator-free operation, power efficiency of 20% at 105°C, and operation up to 150ºC. Suitable for transceivers in data communications, they offer relative intensity noise below -155 dB/Hz, sidemode suppression ratio >55 dB, and beam divergence of 35 × 7 degrees.
Innolume
Dortmund, Germany