Diode laser system offers processing temperature monitoring
The DLight S diode laser system for laser wafer annealing generates a 70 μm narrow line laser beam with an aspect ratio of 160:1. It offers continuous energy output up to 1800 W/mm2, for >95% beam uniformity and >98% output power stability. It also has processing temperature monitoring and in situ detection of output beam quality.
Focuslight Technologies
Xi’an, China