Pulsed semiconductor laser diode has utility in industrial lidar applications
The Generation 2 905 nm high-volume pulsed semiconductor laser diode for rangefinding and industrial lidar applications includes a multilayer monolithic chip design, 3 W/A, an improved GaAs structure, and 85 W (typical) pulsed peak power. It has an optical emitting area of 225 × 10 µm and a triple-cavity design for 3X the optical power compared to a single-cavity design.
Excelitas Technologies
Waltham, MA