Pulsed semiconductor laser diode has utility in industrial lidar applications

    Jan. 19, 2021
    The Generation 2 905 nm high-volume pulsed semiconductor laser diode includes a multilayer monolithic chip design.
    Excelitas 5ff74f1a7ebec

    The Generation 2 905 nm high-volume pulsed semiconductor laser diode for rangefinding and industrial lidar applications includes a multilayer monolithic chip design, 3 W/A, an improved GaAs structure, and 85 W (typical) pulsed peak power. It has an optical emitting area of 225 × 10 µm and a triple-cavity design for 3X the optical power compared to a single-cavity design.

    Excelitas Technologies

    Waltham, MA

    excelitas.com

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