Intense Ltd., developer of next generation lasers, has announced the Series 2675 Epi-Stack, an extremely high power, 905 nm short pulsed diode laser capable of up to 75 W of peak power from a small 200 µm x 10 µm aperture.
The Series 2675 is a single, monolithic chip with three high efficiency, epitaxially grown emitters. The emitters are enclosed in a rugged, hermetically sealed, 5.6 mm (TO56) package. This provides a cost-effective and reliable solution for integrators who need to simplify system design with reduced component count and lower cost.
The Series 2675 Epi-Stack is designed for low duty cycle operation, typically 200 ns, 2 KHz, at operating temperatures of -40 to +85šC. No TE cooling is required. The lasers are designed for aerospace, defense, and industrial applications that require ultra high power from a small emitter area, such as LiDAR, range finding, geoscanning-mapping, ceilometers, and weapons simulation.
In addition to the Series 2675 Epi-Stack, Intense offers a range of pulsed laser products that provide excellent reliability and good quantum efficiency. The Series 2100 are high peak power, 905 nm pulsed diode lasers designed for applications that require powers up to 150 W. The Series 2400 are high peak power, eye safe, 1550 nm pulsed diode lasers designed for applications that require powers up to 48 W.
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