JPSA has been awarded a patent for its front-side laser scribing technique for LED wafers. The patent is applicable in Korea. The patented technique involves the use of a unique laer energy distribution technique, allowing extremely narrow kerf widths - 2.5 microns wide - resulting in faster processing and higher yields. Narrower kerfs also yield more die per wafer.
JPSA developed the LED sapphire wafer dicing capability developed with the IX-200 Chromadice DPSS UV laser wafer singulation system. The new patented technique provides the ability to process wafers at higher yields for LED manufacturers, according to Jeffrey P. Sercel, president.