Mainz, Germany - DILAS is offering a 120 W, high-brightness and high-efficiency device from a tailored-bar (T-Bar) based, 976nm, 100-micron, 0.22NA fiber-coupled module.
Through the optimization of semiconductor chip structures and optical parameters, DILAS’ T-Bar architecture delivers high beam quality and high power using standard micro-optic fast-axis collimators (FAC) and slow-axis collimators (SAC), all assembled with automated processes. The T-Bar is a monolithic, multi-emitter source, allowing the handling of multiple emitters during each manufacturing step to lower complexity and ease-of-manufacturing. The result is enhanced reproducibility, beam quality, and fiber-coupling efficiency.
DILAS’ T-Bar module is useful for research and development use in direct diode applications as well as for excitation of Yb3+ doped media (such as fiber lasers or solid state lasers) that require robust but lightweight high-power, high-brightness diode laser sources.