Quantum-dot laser epitaxial wafers can be made with customized wavelengths from 1200 to 1350 nm. The InAs-GaAs dots are grown at high density. They allow for multistack QD lasers in broad-area and narrow-stripe
devices, with a threshold current density of ~4 A/cm2 per quantum dot layer.
VI Systems offers Quantum Dot (QD) laser epitaxial wafer
VI Systems starts to offer Quantum Dot (QD) laser epitaxial wafers with customized wavelengths from 1200 nm to 1350 nm.
BERLIN, Germany, Jan 21, 2010
VI Systems GmbH (VIS), a leader in optical engines and components developed a universal epitaxial growth technique for high-density InAs-GaAs-based quantum dots (QDs) applicable to QD lasers and other advanced devices. 1300 nm QD lasers are known to reach very high transmission speed of up to 25 GBit/s at very low power consumption, demonstrate low linewidth enhancement factor and suitable for multiple applications from fiber-to-the-home networks to frequency conversion, mode-locking and microwave generation.
A unique technology allows the realization of threshold current density of ~ 4 A/cm2 per QD layer in multi-stack QD lasers in broad area and narrow stripe devices. Wafers based on foundry-based epitaxial growth are offered.
Visit VI Systems at the Photonics West exhibition in San Francisco, CA from Jan 25-27, 2011 I booth # 5217.
About VI Systems
VI Systems GmbH is a fabless developer and manufacturer of optical engines and optoelectronic components for communication, industrial, and consumer applications based in Berlin, Germany.
Information about VI Systems is available on the web at www.v-i-systems.com.
Posted by Lee Mather
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