Nearfield probe maps optoelectronic device photoconductivity

Jan. 1, 1995
Scientists at AT&T Bell Laboratories (Murray Hill, NJ) have developed an scanning optical microscopy method that uses nearfield radiation to produce maps of minority carrier transport in optoelectronic devices, such as multiplequantumwell (MQW) lasers, with a resolution of 250 nm. The nearfield system uses laser radiation at 632 nm passed through an aluminumcoated optical fiber tapered to a small point to produce an incident spot size that is tenfold smaller than in prior techniques.

Scientists at AT&T Bell Laboratories (Murray Hill, NJ) have developed an scanning optical microscopy method that uses nearfield radiation to produce maps of minority carrier transport in optoelectronic devices, such as multiplequantumwell (MQW) lasers, with a resolution of 250 nm. The nearfield system uses laser radiation at 632 nm passed through an aluminumcoated optical fiber tapered to a small point to produce an incident spot size that is tenfold smaller than in prior techniques.

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