Optically active gallium nitride is grown on silicon substrates

    Aug. 1, 1994
    Researchers at Brown University (Providence, RI) grew optically active layers of gallium nitride (GaN) on silicon (Si) substrates with electroncyclotronresonance, plasmaassisted molecularbeam epitaxial techniques. The development of such a widebandga¥material and its integration with silicon is potentially important for opticalstorage applications using blueemitting semiconductors. Lowtemperature exciton luminescence was observed at 3.46 eV.

    Researchers at Brown University (Providence, RI) grew optically active layers of gallium nitride (GaN) on silicon (Si) substrates with electroncyclotronresonance, plasmaassisted molecularbeam epitaxial techniques. The development of such a widebandga¥material and its integration with silicon is potentially important for opticalstorage applications using blueemitting semiconductors. Lowtemperature exciton luminescence was observed at 3.46 eV.

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