The IG26H series extended indium gallium arsenide (InGaAs) infrared (IR) PIN photodiode offers low dark current under reverse bias condition. With a peak responsivity of 1.45 A/W, the photodiode offers increased sensitivity measurements in spectroscopic and radiometric applications. It also features a 50% cutoff wavelength exceeding 2.45 µm. TE1 and TE2 package versions are available to meet thermoelectric cooling requirements, as well as an uncooled TO-can version.
Laser Components
Bedford, NH
Booth #1449
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