ON Semiconductor CMOS sensor produces 120 dB images

Feb. 12, 2018
The Hayabusa CMOS image sensor platform features a 3 µm backside-illuminated pixel design. 

The Hayabusa CMOS image sensor platform features a 3 µm backside-illuminated pixel design that delivers a charge capacity of 100,000 electrons. It is designed for automotive imaging and includes simultaneous on-chip high dynamic range with LED flicker mitigation, plus real-time functional safety and automotive-grade qualification. It produces 120 dB images.

ON Semiconductor

Phoenix, AZ

www.onsemi.com

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