ON Semiconductor CMOS sensor produces 120 dB images

    Feb. 12, 2018
    The Hayabusa CMOS image sensor platform features a 3 µm backside-illuminated pixel design. 
    Content Dam Lfw Online Articles 2018 02 1712lfw Pro 18 Web

    The Hayabusa CMOS image sensor platform features a 3 µm backside-illuminated pixel design that delivers a charge capacity of 100,000 electrons. It is designed for automotive imaging and includes simultaneous on-chip high dynamic range with LED flicker mitigation, plus real-time functional safety and automotive-grade qualification. It produces 120 dB images.

    ON Semiconductor

    Phoenix, AZ

    www.onsemi.com

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