• ON Semiconductor CMOS sensor produces 120 dB images

    The Hayabusa CMOS image sensor platform features a 3 µm backside-illuminated pixel design. 
    Feb. 12, 2018

    The Hayabusa CMOS image sensor platform features a 3 µm backside-illuminated pixel design that delivers a charge capacity of 100,000 electrons. It is designed for automotive imaging and includes simultaneous on-chip high dynamic range with LED flicker mitigation, plus real-time functional safety and automotive-grade qualification. It produces 120 dB images.

    ON Semiconductor

    Phoenix, AZ

    www.onsemi.com

    Sign up for Laser Focus World Newsletters
    Get the latest news and updates.

    Voice Your Opinion!

    To join the conversation, and become an exclusive member of Laser Focus World, create an account today!