ON Semiconductor CMOS sensor produces 120 dB images
The Hayabusa CMOS image sensor platform features a 3 µm backside-illuminated pixel design.
The Hayabusa CMOS image sensor platform features a 3 µm backside-illuminated pixel design that delivers a charge capacity of 100,000 electrons. It is designed for automotive imaging and includes simultaneous on-chip high dynamic range with LED flicker mitigation, plus real-time functional safety and automotive-grade qualification. It produces 120 dB images.