Sharp IGZO display beats a-Si on power consumption

Jan. 16, 2013
In a story from Steve Sechrist on Display Central, Sharp's indium gallium zinc oxide (IGZO) display beats amorphous silicon (a-Si or A-Si) in terms of power consumption.

By Display Central (http://www.display-central.com/)

Steve Sechrist of Display Central writes:

At CES Sharp made its new IGZO technology a centerpiece of the company's presentation on Press Day that will transform displays by moving from amorphous silicon (A-Si) material to the Indium Gallium Zinc Oxide with far superior electron mobility and much smaller TFTs (thin film transistors) that significantly boost the pixel aperture ratio.

The cascading effect of these two advantages over A-Si are stunning, and Sharp is taking full advantage, as evidenced in the CES booth. The big advantage in mobile displays comes in power savings, as the larger aperture ratio allows for far fewer LED backlights to achieve the same brightness levels. But beyond the obvious power savings from fewer backlights, the high electron mobility from Sharp IGZO also allows the display panel to modulate the on/off state (at about 100 Hz) and still maintain the image on the screen, according to Chris Frank of the Sharp Camas Labs in Washington State.

For the complete story, click here.

SOURCE: Display Central; http://www.display-central.com/flat-panel/sharp-igzo-to-transform-displays-ces-update/?utm_source=Insight+Media+Subscribers&utm_campaign=0635c54d7d-DD_2012_06_01&utm_medium=email

IMAGE: Sharp showed their indium gallium zinc oxide (IGZO) display at CES 2013. (Courtesy Display Central)

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