Mitsubishi Announces Compound Semiconductor Division

March 31, 2003
Sunnyvale, CA, March 31, 2002. Mitsubishi Electric & Electronic USA, Inc., will establish a new Semiconductor Division 2003, to provide compound semiconductors in discrete and module form for optoelectronic and microwave/radio frequency (RF) customers based in North America. The new division will remain headquartered in California's "Silicon Valley" area and will provide marketing, sales and application engineering support.

Sunnyvale, CA, March 31, 2002. Mitsubishi Electric & Electronic USA, Inc., will establish a new Semiconductor Division 2003, to provide compound semiconductors in discrete and module form for optoelectronic and microwave/radio frequency (RF) customers based in North America. The new division will remain headquartered in California's "Silicon Valley" area and will provide marketing, sales and application engineering support. Regional sales offices and third-party sales and distribution channels will also be located throughout the United States and Canada.

"We are establishing the new Semiconductor Division to demonstrate our continued commitment to our optoelectronic and microwave/RF customers," said Kiyoshi Kawakami, president and CEO of Mitsubishi Electric & Electronic USA, Inc. "Although the overall high-technology market continues to go through challenging times, we believe that compound semiconductors will remain a strong and viable market over the long term. Our new division will enable us to continue offering world-class products to these customers."

"At a time when many of our competitors are receding, we have increased our efforts in next-generation optoelectronic and microwave/RF technologies," said Daniel Chen, general manager of the new division. "We believe that by making the investment now, we will be in the best position to provide our customers with the most advanced technologies when the market demands them. We have a highly qualified team of professionals ready to bring these technologies to market with sensitivity to the unique needs of each customer."

Mitsubishi Electric offers a diverse range of optoelectronic products for synchronous digital hierarchy (SDH), synchronous optical network (SONET), 10-Gigabit Ethernet (10-GbE), fiber channel, coarse wavelength division multiplexing (CWDM), dense wavelength division multiplexing (DWDM), data communication and optical time domain reflectometer (OTDR) applications, as well as passive optical network systems, test and instrumentation applications and cable television (CATV) distribution.

Discrete light sources include electro-absorption (EA) modulators; Fabry-Perot (FP), distributed feedback (DFB), and pump laser diodes; and EA modulated laser (EML) diodes. Other discrete products include avalanche and PIN photodiodes, laser drivers, and receiver pre-amplifiers. The company also manufactures laser diode and detector modules, as well as integrated transmitters-receivers (transceivers) and transponders.

The company's optoelectronic product families conform to leading-edge current and future multi-source agreements such as XENPAK, X2, XPAK, and XFP for transmission speeds ranging from 155 megabits per second (Mbps) to 10 gigabits per second (Gbps), with 40-Gbps products beginning introduction. Mitsubishi Electric milestones include the introduction of the world's first single-chip, 10-gigabit Ethernet physical-layer transceiver large-scale integrated circuit (LAN-PHY LSI) manufactured using silicon-on-insulator complementary metal-oxide semiconductor (SOI-CMOS) technology.

For more information, visit www.mitsubishichips.com .

Laser Focus World

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