Infrared-laser detectors

Photodetectors made of a quaternary narrow-ga¥semiconductor, mercury cadmium zinc telluride (HgCdZnTe), operate in the 2-14-µm-wavelength range without cryogenic cooling. Detector performance is improved through optical immersion of sensitive elements in lenses formed directly in the transparent substrate of the epitaxial layer. Bias power is reduced by a factor of seven for hemispherical immersion and by a factor of 50 for the hyper-hemispherical immersion.

Infrared-laser detectors

Photodetectors made of a quaternary narrow-ga¥semiconductor, mercury cadmium zinc telluride (HgCdZnTe), operate in the 2-14-µm-wavelength range without cryogenic cooling. Detector performance is improved through optical immersion of sensitive elements in lenses formed directly in the transparent substrate of the epitaxial layer. Bias power is reduced by a factor of seven for hemispherical immersion and by a factor of 50 for the hyper-hemispherical immersion.

BSA Technology, Torrance, CA

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