InGaAs photodiodes offer dark current of 0.1 nA typical
The FD80 series InGaAs photodiodes feature a planar-passivated device structure with an 80 µm diameter active area on a vertical- or horizontal-mount S8 ceramic package pigtail assembly. Typical responsivity is 0.85 A/W at 1300 nm with dark current of 0.1 nA typical. An optional internal fiber tip angle is available, polished for low back-reflection.
Fermionics Opto-Technology
Simi Valley, CA