InGaAs photodiodes offer dark current of 0.1 nA typical

March 25, 2022
The FD80 series InGaAs photodiodes feature a planar-passivated device structure with an 80 µm diameter active area.

The FD80 series InGaAs photodiodes feature a planar-passivated device structure with an 80 µm diameter active area on a vertical- or horizontal-mount S8 ceramic package pigtail assembly. Typical responsivity is 0.85 A/W at 1300 nm with dark current of 0.1 nA typical. An optional internal fiber tip angle is available, polished for low back-reflection.

Fermionics Opto-Technology

Simi Valley, CA

www.fermionics.com

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