InGaAs avalanche photodiodes are optimized for 1550 nm
C30645L-080 and C30662L-200 indium gallium arsenide (InGaAs) avalanche photodiodes are designed for high-volume eye-safe laser rangefinding and lidar time-of-flight systems. Optimized for 1550 nm, they feature a 3 × 3 mm2 SMT ceramic package, detection area of 80 µm and 200 µm, and spectral response of 1000–1700 nm.
Excelitas Technologies
Waltham, MA