TSMC to use ArF immersion lithography all the way down to 10 nm feature sizes

TSMC
Burn J. Lin, vice president of research and development at Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) says a quadruple patterning process will allow the company to produce silicon chips with feature sizes down to 10 nm using conventional argon fluoride (ArF) lithography at a 193 nm wavelength. (Image: Tech-On!)


Hsinchu, Taiwan--In an interview, Burn J. Lin, vice president of research and development at TSMC (Taiwan Semiconductor Manufacturing Co. Ltd.) described the company's roadmap for its future computer-chip lithography production techniques as it tries to keep in line with Moore's Law. THe interview was conducted by Nikkei BP Semiconductor Research.

Because the development of extreme ultraviolet (EUV) lithography is behind schedule throughout the industry, TSMC will continue to use its argon fluoride (ArF) immersion lithography (which relies on 193-nm-emitting ArF excimer lasers), which the company introduced for the 40 nm process, for 28, 20, 16, and 10 nm processes. While TSMC has been using single-patterning lithography based on ArF immersion for the 28 nm and older processes, it will introduce a double-patterning technology, which splits the pattern pitch formed in the first lithography in half, for the 20 nm process.

TSMC has already been using a method to form patterns using double exposures to trim the edges of patterned lines. But, as Lin says, "For the 20 nm process, we started to use it in the aim of splitting pitch in half for the first time." The company started trial production with the 20 nm process in 2013.

For the 16 nm process, with which TSMC will start trial production in 2014, the company will introduce a FinFET technology using a 3D channel structure. As a result, the power consumption and performance of the resulting chips will be improved.

However, TSMC basically will not change the design rules for metal wiring. So, the density (pitch) of circuit patterns with the 16 nm technology will be equivalent to that os the 20 nm technology. In other words, the company will not make major changes to the lithography technology. Still, Lin says, "We need to make improvements to the lithography technology to cope with the 3D structure of the FinFET."

For the 10 nm process, which will start trial production sometime between the second half of 2015 to the first half of 2016, the company will introduce a quadruple patterning technology, which will narrow pitch to 1/4 the projected pattern's pitch, for some critical layers while using ArF immersion.

Also, TSMC plans to use its EUV lithography technology for some layers in the 10 nm or 7 nm generation if technology development proceeds smoothly. The schedule for the trial production with the 7 nm process has not been determined yet. But it is expected to start in 2018 -- according to Moore's Law.

Source: Tech-On! at: http://techon.nikkeibp.co.jp/english/NEWS_EN/20130702/290691/

Most Popular Articles

Webcasts

Opportunities in the Mid-IR

The technology for exploiting the mid-IR is developing rapidly:  it includes quantum-cascade lasers and other sources, spectroscopic instruments of many...

Fiber Optic Sensors – Fundamentals, Principles and Applications

In this webcast, sponsored by Nufern, we focus on optical fiber sensing technology.  Fundamental concepts will be presented first, followed by the under...

Infinite Possibilities – Easily Combining Scanner and Servo Motion

High precision motion control applications such as laser micromachining, 2-photon polymerization, glass panel and film patterning, and additive manufacturing...

Solutions in Search of Problems: What Spectroscopy Can Do for You

Spectroscopy is so pervasive that most of us take it for granted. We use it for routine laboratory and test measurements without appreciating how those same ...

Technical Digests

HIGH-ENERGY LASER COATINGS: Eliminating laser damage proactively

High-power and high-energy thin-film antireflection coatings for laser optics require careful des...
Sponsored by

LIBS -- spectroscopy for remote identification of materials

Laser-induced-breakdown spectroscopy (LIBS) uses a pulsed laser to vaporize a small sample of a s...
Sponsored by

Laser Tools for Materials Processing

Laser materials processing requires not only the appropriate industrial laser system, but also a ...
Sponsored by

Click here to have your products listed in the Laser Focus World Buyers Guide.

RELATED PRODUCTS

Phantom v1610

Phantom v1610 high-speed digital camera can shoot 1 million FPS.

Phantom v711

Phantom v711 high-speed digital camera

Evolve 128 EMCCD Camera

Quantitative high performance with extreme sensitivity for low-light applications.

RELATED COMPANIES

Surface Optics Corp

Designs and manufactures hyperspectral and multispectral imagers operating from the ult...

Optics Balzers AG

Possesses comprehensive know-how in optical thin-film coatings and components, glass pr...

Cremat Inc

Manufactures and supplies charge-sensitive preamplifiers for use in nuclear and x-ray d...

Social Activity

  •  
  •  
  •  
  •  
  •  
Copyright © 2007-2014. PennWell Corporation, Tulsa, OK. All Rights Reserved.PRIVACY POLICY | TERMS AND CONDITIONS