Lasers & Sources

Eagleyard Photonics to showcase broad area semiconductor laser diode at SPIE Photonics West 2016

Jan. 22, 2016

An 808 nm broad-area semiconductor laser diode delivers 20 W peak power under pulsed operation from a single emitter.

Content Dam Lfw Online Articles 2016 01 Eagleyard Web

An 808 nm broad-area semiconductor laser diode delivers 20 W peak power under pulsed operation from a single emitter for high-resolution sensing applications in extreme harsh environments. Specifications include a 10 µs pulse width at a 25 kHz repetition rate, and an operating temperature range from -40° to 80°C. A version with fast axis collimation (FAC) is also available.

SPIE Photonics West booth number: 932

To Learn More:

Contact: Eagleyard Photonics
Headquarters: Berlin, Germany
Product: 808 nm broad-area semiconductor laser diode
Key Features: 10 µs pulse width

What Eagleyard Photonics says:
View more information on the 808 nm broad-area semiconductor laser diode.

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