Indium arsenide device provides mid-IR output

High-power mid-infrared semiconductor lasers operating at wavelengths u¥to 3.65 µm have been demonstrated by scientists at Hughes Research Laboratories (Malibu, CA) and MIT Lincoln Laboratory (Lexington, MA). In a paper presented at the Seventh International Conference on Narrow Ga¥Semiconductors (Santa Fe, NM) in January, 1995, researchers Y. H. Zhang, H. Q. Le, D. H. Chow, and R. H. Miles describe what are reportedly the first mid-IR devices based on an InAs/InAsSb type-II superlat

Stephen G. Anderson

Plasma-chemical-made fiber improves optical-amplifier characteristics

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