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Laser Technology News 2006 p7:

• Swift scientists locate 13-billion-year old black hole
  March 9, 2006, University Park, PA--In this week's issue of Nature, scientists at Penn State and their U.S. and European colleagues discuss how the gamma-ray burst, detected on Sept. 4 by telescopes aboard NASA's Swift satellite, was the result of a massive star collapsing into a black hole.
• Imperial College researchers capture protons in action
  March 6, 2006, London, England--The fastest ever observations of protons moving within a molecule open a new window on fundamental processes in chemistry and biology, researchers report this week in the journal Science.
• Clean nanothickness silicon has conductivity boost
  February 28, 2006, Madison, WI--When University of Wisconsin (UW)-Madison graduate student Pengpeng Zhang successfully imaged a piece of silicon only 10 nm in thickness, she and her research olleagues were puzzled. According to established thinking, the feat should be impossible because her microscopy method required samples that conduct electricity.
• IBM researchers push DUV lithography envelope
  February 21, 2006, San Jose, CA--Researchers at IBM have shrunk the minimum size of features produced by deep-ultraviolet (DUV) lithography down to just under 30 nm. They have done it by raising the refractive index of the fluid used in the immersion-lithography process; this change will allow the creation of lens designs that reach higher resolution.
• Messing with atoms leads to material breakthrough
  February 20, 2006, London, England--A new optical effect created by researchers from Imperial College London and the University of Neuchatel, Switzerland could one day enable solid objects such as walls to be rendered transparent. The effect is based on the development of a new material that exploits the way atoms in matter move, to make them interact with a laser beam in an entirely new way.
• NEC develops LSI optical-interconnect technology
  February 14, 2005, Tokyo, Japan--NEC Corporation says it has developed fundamental silicon (Si) nanophotonics technology that facilitates optical data transmission in large-scale-integration (LSI) chips by eliminating data-transmission bottlenecks.
• Transistor laser goes nonlinear
  February 7, 2006, Champaign, IL--A transistor laser invented earlier by scientists at the University of Illinois at Urbana-Champaign has now been found to possess fundamental nonlinear characteristics that are new to a transistor and permit its use as a dual-input, dual-output, high-frequency signal processor.
• NIST demonstrates ultrafast laser frequency comb system
  February 6, 2006, Gaithersburg, MD--Scientists at the National Institute of Standards and Technology (NIST) have demonstrated the use of an ultrafast laser "frequency comb" system for improved remote measurements of distance and vibration.
• Fraunhofer group demonstrates transparent OLED displays
  January 30, 2006, Potsdam, Germany--Scientists at the Fraunhofer Institute for Applied Polymer Research IAP have succeeded in constructing transparent OLED displays using light-emitting polymers.
• Edmund fights the etendue battle
  January 27, 2006, Barrington, NJ--In the interests of better capturing light from LEDs, Edmund Optics has introduced its EOS illumination-delivery system, which, according to the company's president, John Stack, can channel the captured LED light through an aperture at an efficiency that reaches the limits of what physics allow.

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