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Laser Technology News 2005 p1:

• 360-mm-diameter germanium crystal is grown
  December 30, 2005, Asslar, Germany--CGS GmbH and Photonic Sense GmbH (Eisenach, Germany) have grown a world-record-sized germanium crystal. Photonic Sense grew the crystal, while CGS GmbH provided the process-engineering know-how. The crystal had a diameter exceeding 360 mm. The ability to grow larger germanium crystals results in substantially improved efficiency in the production of the substance.
• Optical Surfaces to supply focusing mirrors for Astra Gemini project
  December 26, 2005, Surrey, England--Optical Surfaces Ltd. has been selected to supply two high precision mirrors to the Central Laser Facility at the renowned Rutherford Appleton Laboratories (Didcot, UK) for the Astra Gemini project. The mirrors will be critical beam focusing components that will help increase the intensity of the existing Astra laser by three orders of magnitude.
• NIST and MIT experiments further confirm general relativity
  December 22, 2005, Gaithersburg, MD--In experiments described in today's issue of Nature, researchers at the National Institute of Standards and Technology (NIST) and the Massachusetts Institute of Technology (MIT; Cambridge, MA) added to a catalog of confirmations that matter and energy are related in a precise way. Specifically, energy (E) equals mass (m) times the square of the speed of light (c), a prediction of Albert Einstein's theory of special relativity.
• LEDs in walls and ceilings simplify design changes
  December 19, 2005, Troy, NY--The Alliance for Solid-State Illumination Systems and Technologies (ASSIST), an LED industry group organized by the Lighting Research Center (LRC) at Rensselaer Polytechnic Institute, unveiled a novel concept for lighting homes and offices that integrates light-emitting diode (LED) technology with building materials and systems to create electronic walls and ceilings.
• Carl Zeiss ships first EUV optical system
  December 13, 2005, Oberkochen, Germany--Carl Zeiss SMT has shipped the first optical system for an extreme ultraviolet (EUV) lithography tool to ASML (Veldhoven, The Netherlands), a provider of lithography systems for the semiconductor industry. A next-generation technology, EUV is based on a 13-nm illumination wavelength, which allows chipmakers to print feature sizes of 32 nm and below on integrated circuits.
• Rod-type fiber laser overcomes technical limitations
  December 12, 2005, Talence, France--Taking advantage of the best of both worlds, scientists at Femlight and the University of Jena (Jena, Germany) have used a rod-type fiber laser to overcome limits of conventional solid-state and fiber lasers.
• Picolight ships first 4-Gbps 1310-nm VCSEL transceivers
  December 9, 2005, Louisville, CO--Picolight announced that they are the first to ship 1310-nm vertical cavity surface-emitting laser (VCSEL) transceivers in a 4-Gbps triple-rate (1-, 2- and 4-Gbps) small form factor pluggable (SFP) configurations. With extended-reach capability and low power consumption, the new transceivers satisfy a broad range of short-to-medium distance applications including 4-Gbps Fibre Channel at 10 km for storage area networks (SANs).
• Researchers demonstrate storage and retrieval of single photons
  December 8, 2005, Atlanta, GA--In one of three papers published the December 8 issue of Nature, a group of physicists from the Georgia Institute of Technology led by Professors Alex Kuzmich and Brian Kennedy describe the storage and retrieval of single photons transmitted between remote quantum memories composed of rubidium atoms.
• ASML describes immersion and EUV lithography achievements
  December 6, 2005, Tokyo, Japan--At Semicon Japan, ASML Holding NV (ASML) announced that it has made significant progress toward the development of both high-numerical aperture (NA) immersion and extreme-ultraviolet (EUV) lithography technology--two critical elements in the semiconductor industry's drive to continue its historical trend of packing more power onto silicon chips.
• Translucent achieves milestone in optical silicon project
  November 28, 2005, Palo Alto, CA--Translucent Inc., Silex Systems' (Sydney, Australia) silicon electronics and photonics semiconductor subsidiary, says it has achieved another milestone in its efforts to develop advanced silicon-based photonics devices: the demonstration of electroluminescence (EL) at room temperature in a form of silicon that is compatible with current mass-produced silicon chips and future silicon electronics technology nodes.

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