Electrically pumped quantum-dot III-V lasers grown directly on silicon for integrated photonics

March 7, 2016
Silicon-based photonic/electronic integration gets a boost from InAs/GaAs lasers grown directly without wafer bonding.

Researchers from University College London (London, England), the University of Sheffield (Sheffield, England), and Cardiff University (Cardiff, Wales) have fabricated III-V semiconductor lasers directly on silicon, removing a hurdle to the hybrid integration of lasers with silicon photonic circuits.1 The previous, more complicated and costly, method of combining III-V lasers with silicon consisted of wafer bonding, in which the lasers are made separately, then bonded to the silicon photonic circuit.

RELATED: First telecom-wavelength QD laser is grown on silicon (1300 nm wavelength; done in 2011)

The researchers grew electrically pumped continuous-wave (CW) indium arsenide/gallium arsenide (InAs/GaAs) quantum-dot (QD) lasers on silicon that emit at a wavelength of 1300 nm, have a room-temperature output power of 105 mW, can operate at temperatures up to 120°C, and have a threshold current density of only 62.5 A/cm2. The 3100 hours of CW operation leads to an extrapolated mean time to failure of 100,158 hours.

“The techniques that we have developed permit us to realize the Holy Grail of silicon photonics—an efficient and reliable electrically driven semiconductor laser directly integrated on a silicon substrate,” says Alwyn Seeds, Head of the Photonics Group at University College London. “Our future work will be aimed at integrating these lasers with waveguides and drive electronics, leading to a comprehensive technology for the integration of photonics with silicon electronics."

The research was funded by the Engineering and Physical Sciences Research Council (EPSRC; Swindon, England) and was led by Cardiff University.

Source: http://www.cardiff.ac.uk/news/view/214296-step-towards-holy-grail-of-silicon-photonics

REFERENCE:

1. Siming Chen et al., Nature Photonics (2016); doi: 10.1038/nphoton.2016.21; http://www.nature.com/nphoton/journal/vaop/ncurrent/full/nphoton.2016.21.html

About the Author

John Wallace | Senior Technical Editor (1998-2022)

John Wallace was with Laser Focus World for nearly 25 years, retiring in late June 2022. He obtained a bachelor's degree in mechanical engineering and physics at Rutgers University and a master's in optical engineering at the University of Rochester. Before becoming an editor, John worked as an engineer at RCA, Exxon, Eastman Kodak, and GCA Corporation.

Sponsored Recommendations

How Precision Motion Systems are Shaping the Future of Semiconductor Manufacturing

March 28, 2024
This article highlights the pivotal role precision motion systems play in supporting the latest semiconductor manufacturing trends.

Understanding 3D Printing Tolerances: A Guide to Achieving Precision in Additive Manufacturing

March 28, 2024
In the world of additive manufacturing, precision is paramount. One crucial aspect of ensuring precision in 3D printing is understanding tolerances. In this article, we’ll explore...

Automation Technologies to Scale PIC Testing from Lab to Fab

March 28, 2024
This webinar will cover the basics of precision motion systems for PIC testing and discuss the ways motion solutions can be specifically designed to address the production-scale...

Case Study: Medical Tube Laser Processing

March 28, 2024
To enhance their cardiovascular stent’s precision, optimize throughput and elevate part quality, a renowned manufacturer of medical products embarked on a mission to fabricate...

Voice your opinion!

To join the conversation, and become an exclusive member of Laser Focus World, create an account today!